Measurement of phosphorus segregation in silicon at the atomic-scale using STM

Details Measurement of phosphorus segregation in silicon at the atomic-scale using STM Measurement of phosphorus segregation in silicon at the atomic-scale using STM

2003-07-21

arxiv.org/abs/cond-mat/0307495v1

Physics

Condensed Matter

Scientific paper

10.1063/1.1784881

In order to fabricate precise atomic-scale devices in silicon using a combination of scanning tunnelling microscopy (STM) and molecular beam epitaxy it is necessary to minimize the segregation/diffusion of dopant atoms during silicon encapsulation. We characterize the surface segregation/diffusion of phosphorus atoms from a $\delta$-doped layer in silicon after encapsulation at 250$^{\circ}$C and room temperature using secondary ion mass spectrometry (SIMS), Auger electron spectroscopy (AES), and STM. We show that the surface phosphorus density can be reduced to a few percent of the initial $\delta$-doped density if the phosphorus atoms are encapsulated with 5 or 10 monolayers of epitaxial silicon at room temperature. We highlight the limitations of SIMS and AES to determine phosphorus segregation at the atomic-scale and the advantage of using STM directly.

Affiliated with

Also associated with

No associations

Rating

Measurement of phosphorus segregation in silicon at the atomic-scale using STM does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Measurement of phosphorus segregation in silicon at the atomic-scale using STM, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Measurement of phosphorus segregation in silicon at the atomic-scale using STM will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-340663