Measurement of electron-hole friction in an n-doped GaAs/AlGaAs quantum well using optical transient grating spectroscopy

Details Measurement of electron-hole friction in an n-doped GaAs/AlGaAs quantum well using optical transient grating spectroscopy Measurement of electron-hole friction in an n-doped GaAs/AlGaAs quantum well using optical transient grating spectroscopy

2011-03-30

arxiv.org/abs/1103.5800v2

PRL 106, 247401 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

to appear in PRL

Scientific paper

10.1103/PhysRevLett.106.247401

We use phase-resolved transient grating spectroscopy to measure the drift and diffusion of electron-hole density waves in a semiconductor quantum well. The unique aspects of this optical probe allow us to determine the frictional force between a two-dimensional Fermi liquid of electrons and a dilute gas of holes. Knowledge of electron-hole friction enables prediction of ambipolar dynamics in high-mobility electron systems.

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