Measurement and simulation of anisotropic magnetoresistance in single GaAs/MnAs core/shell nanowires

Details Measurement and simulation of anisotropic magnetoresistance in single GaAs/MnAs core/shell nanowires Measurement and simulation of anisotropic magnetoresistance in single GaAs/MnAs core/shell nanowires

2012-01-15

arxiv.org/abs/1201.3115v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Submitted to Applied Physics Letters; some typos corrected and a defective figure replaced

Scientific paper

We report four probe measurements of the low field magnetoresistance in single core/shell GaAs/MnAs nanowires synthesized by molecular beam epitaxy, demonstrating clear signatures of anisotropic magnetoresistance that track the field-dependent magnetization. A comparison with micromagnetic simulations reveals that the principal characteristics of the magnetoresistance data can be unambiguously attributed to the nanowire segments with a zinc blende GaAs core. The direct correlation between magnetoresistance, magnetization and crystal structure provides a powerful means of characterizing individual hybrid ferromagnet/semiconductor nanostructures.

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