MBE Growth of Cubic InN

Details MBE Growth of Cubic InN MBE Growth of Cubic InN

2007-02-06

arxiv.org/abs/cond-mat/0702140v1

MRS Symp. Proc. Vol. 955E, I8.3 (2007)

Physics

Condensed Matter

Materials Science

3 pages with 3 figures; MRS Symposium, Fall Meeting 2006

Scientific paper

Cubic InN films were grown on top of a c-GaN buffer layer by rf-plasma assisted MBE at different growth temperatures. X-Ray diffraction investigations show that the c-InN layers consist of a nearly phase-pure zinc blende (cubic) structure with a small fraction of the wurtzite (hexagonal) phase grown on the (111) facets of the cubic layer. The content of hexagonal inclusions is decreasing with decreasing growth temperature. The full-width at half-maximum (FWHM) of c-InN (002) rocking curve is about 50 arcmin. Low temperature photoluminescence measurements reveal a band gap of about 0.61eV for cubic InN.

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