Maximum Metallic Conductivity in Si-MOS Structures

Details Maximum Metallic Conductivity in Si-MOS Structures Maximum Metallic Conductivity in Si-MOS Structures

1998-12-10

arxiv.org/abs/cond-mat/9812183v2

Phys. Rev. B 60, R2154 (1999)

Physics

Condensed Matter

Strongly Correlated Electrons

3 pages, 3 ps-figs, RevTex, new data

Scientific paper

10.1103/PhysRevB.60.R2154

We found that the conductivity of the two-dimensional electron system in
Si-MOS structures is limited to a maximum value, G_{max}, as either density
increases or temperature decreases. This value G_{max} is weakly disorder
dependent and ranging from 100 to 140 e^2/h for samples whose mobilities differ
by a factor of 4.

Affiliated with

Also associated with

No associations

Rating

Maximum Metallic Conductivity in Si-MOS Structures does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Maximum Metallic Conductivity in Si-MOS Structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Maximum Metallic Conductivity in Si-MOS Structures will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-38280