Mapping spin-orbit splitting in strained InGaAs epilayers

Details Mapping spin-orbit splitting in strained InGaAs epilayers Mapping spin-orbit splitting in strained InGaAs epilayers

2010-06-29

arxiv.org/abs/1006.5685v1

Phys. Rev. B 82, 081304(R) (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 4 figures

Scientific paper

10.1103/PhysRevB.82.081304

Time- and spatially-resolved Faraday rotation spectroscopy is used to measure the magnitude and direction of the momentum-dependent spin splitting in strained InGaAs epilayers. The epilayers are lattice-matched to the GaAs substrate and designed to reduce inhomogeneous effects related to strain relaxation. Measurements of momentum-dependent spin splitting as a function of electron spin drift velocity along [100], [010], [110] and [1$\overline{1}$0] directions enable separation of isotropic and anisotropic effective magnetic fields that arise from uniaxial and biaxial strain along $\langle$110$\rangle$. We relate our findings to previous measurements and theoretical predictions of spin splitting for inversion symmetry breaking in bulk strained semiconductors.

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