Many-Body Renormalization of Semiconductor Quantum Wire Excitons: Absorption, Gain, Binding, Unbinding, and Mott Transition

Details Many-Body Renormalization of Semiconductor Quantum Wire Excitons: Absorption, Gain, Binding, Unbinding, and Mott Transition Many-Body Renormalization of Semiconductor Quantum Wire Excitons: Absorption, Gain, Binding, Unbinding, and Mott Transition

1999-05-04

arxiv.org/abs/cond-mat/9905038v1

Phys. Rev. Lett. 84, 2010 (2000).

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, 4 figures, submitted to PRL

Scientific paper

10.1103/PhysRevLett.84.2010

We consider theoretically the formation and stability of quasi-one dimensional many-body excitons in GaAs quantum wire structures under external photoexcitation conditions by solving the dynamically screened Bethe-Salpeter equation for realistic Coulomb interaction. In agreement with several recent experimental findings the calculated excitonic peak shows very weak carrier density dependence upto (and even above) the Mott transition density, $n_c\sim3\times10^5$ cm$^{-1}$. Above $n_c$ we find considerable optical gain demonstrating compellingly the possibility of one-dimensional quantum wire laser operation.

Affiliated with

Also associated with

No associations

Rating

Many-Body Renormalization of Semiconductor Quantum Wire Excitons: Absorption, Gain, Binding, Unbinding, and Mott Transition does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Many-Body Renormalization of Semiconductor Quantum Wire Excitons: Absorption, Gain, Binding, Unbinding, and Mott Transition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Many-Body Renormalization of Semiconductor Quantum Wire Excitons: Absorption, Gain, Binding, Unbinding, and Mott Transition will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-257638