Manipulation of the Spin Memory of Electrons in n-GaAs

Details Manipulation of the Spin Memory of Electrons in n-GaAs Manipulation of the Spin Memory of Electrons in n-GaAs

2002-05-16

arxiv.org/abs/cond-mat/0205352v1

Physical Review Letters v.88, p.256801 (2002)

Physics

Condensed Matter

Scientific paper

10.1103/PhysRevLett.88.256801

We report on the optical manipulation of the electron spin relaxation time in a GaAs based heterostructure. Experimental and theoretical study shows that the average electron spin relaxes through hyperfine interaction with the lattice nuclei, and that the rate can be controlled by the electron-electron interactions. This time has been changed from 300 ns down to 5 ns by variation of the laser frequency. This modification originates in the optically induced depletion of n-GaAs layer.

Affiliated with

Also associated with

No associations

Rating

Manipulation of the Spin Memory of Electrons in n-GaAs does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Manipulation of the Spin Memory of Electrons in n-GaAs, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manipulation of the Spin Memory of Electrons in n-GaAs will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-652917