Manipulation of the magnetic configuration of (Ga,Mn)As nanostructures

Details Manipulation of the magnetic configuration of (Ga,Mn)As nanostructures Manipulation of the magnetic configuration of (Ga,Mn)As nanostructures

2009-08-11

arxiv.org/abs/0908.1497v1

Applied Physics Letters 95, 062502 (2009)

Physics

Condensed Matter

Materials Science

Scientific paper

10.1063/1.3200242

We have studied the magnetic reversal of L-shaped nanostructures fabricated from (Ga,Mn)As. The strain relaxation due to the lithographic patterning results in each arm having a uniaxial magnetic anisotropy. Our analysis confirms that the magnetic reversal takes place via a combination of coherent rotation and domain wall propagation with the domain wall positioned at the corner of the device at intermediate stages of the magnetic hysteresis loops. The domain wall energy can be extracted from our analysis. Such devices have found implementation in studies of current induced domain wall motion and have the potential for application as non-volatile memory elements.

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