Manifestation of the Exchange Enhancement of the Valley Splitting in the Quantum Hall Effect Regime

Details Manifestation of the Exchange Enhancement of the Valley Splitting in the Quantum Hall Effect Regime Manifestation of the Exchange Enhancement of the Valley Splitting in the Quantum Hall Effect Regime

2006-02-16

arxiv.org/abs/cond-mat/0602376v1

Phys. Rev. B 73, 205324 (2006)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 6 figures

Scientific paper

10.1103/PhysRevB.73.205324

We report a new "dip" effect in the Hall resistance, R_{xy}, of a Si metal-oxide-semiconductor field-effect transistor in the quantum Hall effect regime. With increasing magnetic field, the Hall resistance moves from the plateau at Landau filling factor \nu=6 directly to the plateau at \nu=4, skipping the plateau at \nu=5. However, when the filling factor approaches \nu=5, the Hall resistance sharply "dives" to the value 1/5(h/e^2) characteristic of the \nu=5 plateau, and then returns to 1/4(h/e^2). This is interpreted as a manifestation of the oscillating exchange enhancement of the valley splitting when the Fermi level is in the middle between two adjacent valley-split Landau bands with the asymmetric position of the extended states.

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