Manifestation of electron-electron interaction in the magnetoresistance of graphene

Details Manifestation of electron-electron interaction in the magnetoresistance of graphene Manifestation of electron-electron interaction in the magnetoresistance of graphene

2011-10-26

arxiv.org/abs/1110.5893v2

Phys. Rev. Lett. 108, 106601 (2012)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1103/PhysRevLett.108.106601

We investigate the magnetotransport in large area graphene Hall bars epitaxially grown on silicon carbide. In the intermediate field regime between weak localization and Landau quantization the observed temperature-dependent parabolic magnetoresistivity (MR) is a manifestation of the electron-electron interaction (EEI). We can consistently describe the data with a model for diffusive (magneto)transport that also includes magnetic-field dependent effects originating from ballistic time scales. We find an excellent agreement between the experimentally observed temperature dependence of MR and the theory of EEI in the diffusive regime. We can further assign a temperature-driven crossover to the reduction of the multiplet modes contributing to EEI from 7 to 3 due to intervalley scattering. In addition, we find a temperature independent ballistic contribution to the MR in classically strong magnetic fields.

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