Making a field effect transistor on a single graphene nanoribbon by selective doping

Details Making a field effect transistor on a single graphene nanoribbon by selective doping Making a field effect transistor on a single graphene nanoribbon by selective doping

2007-11-06

arxiv.org/abs/0711.0787v3

Applied Physics Letters 91, 253122, 2007

Physics

Condensed Matter

Materials Science

4 pages, 3 figures. Accepted in APL

Scientific paper

10.1063/1.2826547

Using first-principle electronic structure calculations, we show a metal- semiconductor transition of a metallic graphene nanoribbon with zigzag edges induced by substitutional doping of Nitrogen or Boron atoms at the edges. A field effect transistor consisting of a metal-semiconductor-metal junction can then be constructed by selective doping of the ribbon edges. The current-voltage characteristics of such a prototype device is determined by the first-principle quantum transport calculations.

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