Magnetotransport properties of (Ga,Mn)As investigated at low temperature and high magnetic field

Details Magnetotransport properties of (Ga,Mn)As investigated at low temperature and high magnetic field Magnetotransport properties of (Ga,Mn)As investigated at low temperature and high magnetic field

1999-09-28

arxiv.org/abs/cond-mat/9909393v1

Physics

Condensed Matter

Materials Science

PDF file, 8 pages, 4 figures

Scientific paper

10.1016/S1386-9477(00)00099-0

Magnetotransport properties of ferromagnetic semiconductor (Ga,Mn)As have been investigated. Measurements at low temperature (50 mK) and high magnetic field (<= 27 T) have been employed in order to determine the hole concentration p = 3.5x10^20 cm ^-3 of a metallic (Ga0.947Mn0.053)As layer. The analysis of the temperature and magnetic field dependencies of the resistivity in the paramagnetic region was performed with the use of the above value of p, which gave the magnitude of p-d exchange energy |N0beta | ~ 1.5 eV.

Affiliated with

Also associated with

No associations

Rating

Magnetotransport properties of (Ga,Mn)As investigated at low temperature and high magnetic field does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Magnetotransport properties of (Ga,Mn)As investigated at low temperature and high magnetic field, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetotransport properties of (Ga,Mn)As investigated at low temperature and high magnetic field will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-423589