Physics – Condensed Matter – Materials Science
Scientific paper
2002-09-30
Physics
Condensed Matter
Materials Science
Scientific paper
10.1103/PhysRevB.67.153306
We present evidence of strong Shubnikov-de-Haas magnetoresistance oscillations in a polarization-doped degenerate three-dimensional electron slab in an Al$_{x}$Ga$_{1-x}$N semiconductor system. The degenerate free carriers are generated by a novel technique by grading a polar alloy semiconductor with spatially changing polarization. Analysis of the magnetotransport data enables us to extract an effective mass of $m^{\star}=0.19 m_{0}$ and a quantum scattering time of $\tau_{q}= 0.3 ps$. Analysis of scattering processes helps us extract an alloy scattering parameter for the Al$_{x}$Ga$_{1-x}$N material system to be $V_{0}=1.8eV$.
Ambacher O.
Gossard Arthur. C.
Heikman Sten
Jena Debdeep
Link A.
No associations
LandOfFree
Magnetotransport properties of a polarization-doped three-dimensional electron slab does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Magnetotransport properties of a polarization-doped three-dimensional electron slab, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetotransport properties of a polarization-doped three-dimensional electron slab will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-693755