Magnetotransport in the insulating regime of Mn doped GaAs

Details Magnetotransport in the insulating regime of Mn doped GaAs Magnetotransport in the insulating regime of Mn doped GaAs

2008-02-10

arxiv.org/abs/0802.1344v3

Phys. Rev. B 78, 075202 (2008)

Physics

Condensed Matter

Materials Science

submitted to Phys. Rev. B, we changed the title, we corrected typos and we added few explanations

Scientific paper

10.1103/PhysRevB.78.075202

We consider transport in the insulating regime of GaMnAs. We calculate the resistance, magnetoresitance and Hall effect, assuming that the Fermi energy is in the region of localized states above the valence band mobility edge. Both hopping and activated band transport contributions are included. The anomalous Hall current from band states is very different from the hopping Hall current and has extrinsic (skew) and intrinsic (Luttinger) contributions. Comparison with experiment allows us to assess the degree to which band and hopping contribution determine each of the three transport coefficients in a particular temperature range. There are strong indications that the insulating state transport in GaMnAs is controlled primarily by extended state, band edge, transport rather than by variable range hopping, as reported in the literature.

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