Magnetoresistance in Thin Permalloy Film (10nm-thick and 30-200nm-wide) Nanocontacts Fabricated by e-Beam Lithography

Details Magnetoresistance in Thin Permalloy Film (10nm-thick and 30-200nm-wide) Nanocontacts Fabricated by e-Beam Lithography Magnetoresistance in Thin Permalloy Film (10nm-thick and 30-200nm-wide) Nanocontacts Fabricated by e-Beam Lithography

2006-07-24

arxiv.org/abs/cond-mat/0607608v1

Physics

Condensed Matter

Materials Science

15 pages, 4 figures. Accepted by APL

Scientific paper

10.1063/1.2337538

In this paper we show spin dependent transport experiments in nanoconstrictions ranging from 30 to 200nm. These nanoconstrictions were fabricated combining electron beam lithography and thin film deposition techniques. Two types of geometries have been fabricated and investigated. We compare the experimental results with the theoretical estimation of the electrical resistance. Finally we show that the magnetoresistance for the different geometries does not scale with the resistance of the structure and obtain drops in voltage of 20mV at 20Oe.

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