Magnetoresistance in Single Layer Graphene: Weak Localization and Universal Conductance Fluctuation Studies

Details Magnetoresistance in Single Layer Graphene: Weak Localization and Universal Conductance Fluctuation Studies Magnetoresistance in Single Layer Graphene: Weak Localization and Universal Conductance Fluctuation Studies

2009-10-20

arxiv.org/abs/0910.3737v2

Physics

Condensed Matter

Materials Science

Scientific paper

We report measurements of magnetoresistance in single-layer graphene as a function of gate voltage (carrier density) at 250 mK. By examining signatures of weak localization (WL) and universal conductance fluctuations (UCF), we find a consistent picture of phase coherence loss due to electron-electron interactions. The gate-dependence of the elastic scattering terms suggests that the effect of trigonal warping, i.e., the non-linearity of the dispersion curves, may be strong at high carrier densities, while intra-valley scattering may dominate close to the Dirac point. In addition, a decrease in UCF amplitude with decreasing carrier density can be explained by a corresponding loss of phase coherence.

Affiliated with

Also associated with

No associations

Rating

Magnetoresistance in Single Layer Graphene: Weak Localization and Universal Conductance Fluctuation Studies does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Magnetoresistance in Single Layer Graphene: Weak Localization and Universal Conductance Fluctuation Studies, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetoresistance in Single Layer Graphene: Weak Localization and Universal Conductance Fluctuation Studies will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-143508