Physics – Condensed Matter – Strongly Correlated Electrons
Scientific paper
2000-05-31
Nature Vol 404 April 6 2000 581-584
Physics
Condensed Matter
Strongly Correlated Electrons
4 pages (HTML) 4 figures (jpeg,gif,png) published in Nature 404 April 6, 2000 581-584
Scientific paper
The desire to maximize the sensitivity of read/write heads and thus the information density of magnetic storage devices has produced an intense interest in the magnetoresistance (MR) of magnetic materials. Recent discoveries include "colossal" MR of the manganites1-4 and the enhanced MR of low carrier density ferromagnets4-6. In the low carrier density systems investigated to date as well as the manganites, a key feature is that the electrical conduction is due to a different set of electrons than the localized electrons responsible for the magnetism. Here we propose a mechanism for ferromagnetic MR originating from quantum interference effects, rather than simple scattering. The new mechanism obtains in disordered low carrier density magnets where the magnetism as well as the electrical conduction are due to the same electrons. Here the MR is positive and only weakly temperature dependent below the Curie point. This is very different from the MR seen when conduction electrons and local moments can be treated separately, in which case the MR is negative and strongly peaked at the Curie point.
Aeppli Gabriel
DiTusa J. F.
Fisk Zach
Manyala Ncholu
Siids Y.
No associations
LandOfFree
Magnetoresistance From Quantum Interference Effects in Ferromagnets does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Magnetoresistance From Quantum Interference Effects in Ferromagnets, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetoresistance From Quantum Interference Effects in Ferromagnets will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-362082