Magneto-transport in impurity-doped few-layer graphene spin valve

Details Magneto-transport in impurity-doped few-layer graphene spin valve Magneto-transport in impurity-doped few-layer graphene spin valve

2010-10-15

arxiv.org/abs/1010.3145v1

Phys. Rev. B 82, 155143 (2010)

Physics

Condensed Matter

Materials Science

8 pages, 7 figures, accepted by Phys. Rev. B

Scientific paper

Using Keldysh nonequilibrium Green's function method we study the spin-dependent transport through impurity-doped few layer graphene sandwiched between two magnetic leads with an arbitrary mutual orientations of the magnetizations. We find for parallel electrodes magnetizations that the differential conductance possesses two resonant peaks as the applied bias increases. These peaks are traced back to a buildup of a magnetic moment on the impurity due to the electrodes spin polarization. For a large mutual angle of the electrodes magnetization directions, the two resonant peaks approach each others and merge into a single peak for antiparallel orientation of the electrodes magnetizations. We point out that the tunneling magnetoresistance (TMR) may change sign for relatively small changes in the values of the polarization parameters. Furthermore, we inspect the behaviour of the differential conductance and TMR upon varying the temperature.

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