Magneto-resistive memory in ferromagnetic (Ga,Mn)As nanostructures

Details Magneto-resistive memory in ferromagnetic (Ga,Mn)As nanostructures Magneto-resistive memory in ferromagnetic (Ga,Mn)As nanostructures

2006-10-19

arxiv.org/abs/cond-mat/0610535v1

Physics

Condensed Matter

Materials Science

7 pages, 3 figures

Scientific paper

10.1063/1.2435915

We show a novel magneto-resistive effect that appears in lithographically shaped, three-arm nanostructure, fabricated from ferromagnetic (Ga,Mn)As layers. The effect, related to a rearrangement of magnetic domain walls between different pairs of arms in the structure, reveals as a dependence of zero-field resistance on the direction of previously applied magnetic field. This effect could allow designing devices with unique switching and memory properties.

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