Magnetization of ultrathin (Ga,Mn)As layers

Details Magnetization of ultrathin (Ga,Mn)As layers Magnetization of ultrathin (Ga,Mn)As layers

2002-08-21

arxiv.org/abs/cond-mat/0208411v3

Phys. Rev. B 68, 184421 (2003).

Physics

Condensed Matter

Materials Science

REVTeX 4 style; 5 pages, 4 figures; revised 25/2; revised 25/7 and accepted for publication

Scientific paper

10.1103/PhysRevB.68.184421

Kerr rotation and Superconducting QUantum Interference Device (SQUID) magnetometry measurements were performed on ultrathin (Ga$_{0.95}$Mn$_{0.05}$)As layers. The thinner layers (below 250 \AA) exhibit magnetic properties different than those of thicker ones, associated with different microstructure, and some degree of inhomogeneity. The temperature dependence of the field-cooled-magnetization of the layers is recorded after successive low temperature annealings. While the Curie temperature of the thicker layer (250 \AA) is nearly unchanged, the critical temperature of the thinner layers is enhanced by more than 23 K after two annealings. Secondary Ion Mass Spectrometry (SIMS) experiments on similar layers show that Mn is displaced upon annealing. The results are discussed considering a possible segregation of substitutional and interstitial Mn atoms at the surface of the (Ga,Mn)As layers.

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