Magnetization Dissipation in the Ferromagnetic Semiconductor (Ga,Mn)As

Details Magnetization Dissipation in the Ferromagnetic Semiconductor (Ga,Mn)As Magnetization Dissipation in the Ferromagnetic Semiconductor (Ga,Mn)As

2011-05-20

arxiv.org/abs/1105.4148v2

Phys. Rev. B 84, 104404 (2011)

Physics

Condensed Matter

Materials Science

Final version accepted by Physical Review B

Scientific paper

10.1103/PhysRevB.84.104404

We compute the Gilbert damping in (Ga,Mn)As based on the scattering theory of magnetization relaxation. The disorder scattering is included non-perturbatively. In the clean limit, the spin-pumping from the localized d-electrons to the itinerant holes dominates the relaxation processes. In the diffusive regime, the breathing Fermi-surface effect is balanced by the effects of interband scattering, which cause the Gilbert damping constant to saturate at around 0.005. In small samples, the system shape induces a large anisotropy in the Gilbert damping.

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