Magnetic Proximity Effect as a Pathway to Spintronic Applications of Topological Insulators

Details Magnetic Proximity Effect as a Pathway to Spintronic Applications of Topological Insulators Magnetic Proximity Effect as a Pathway to Spintronic Applications of Topological Insulators

2011-09-16

arxiv.org/abs/1109.3609v2

Physics

Condensed Matter

Materials Science

accepted in Nano Letters

Scientific paper

10.1021/nl201275q

Spin-based electronics in topological insulators (TIs) is favored by the long spin coherence1,2 and consequently fault-tolerant information storage. Magnetically doped TIs are ferromagnetic up to 13 K,3 well below any practical operating condition. Here we demonstrate that the long range ferromagnetism at ambient temperature can be induced in Bi2-xMnxTe3 by the magnetic proximity effect through deposited Fe overlayer. This result opens a new path to interface-controlled ferromagnetism in TI-based spintronic devices.

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