Magnetic Polarons and the Metal-Semiconductor Transition in (Eu,La)B6 and EuO: Raman Scattering Studies

Details Magnetic Polarons and the Metal-Semiconductor Transition in (Eu,La)B6 and EuO: Raman Scattering Studies Magnetic Polarons and the Metal-Semiconductor Transition in (Eu,La)B6 and EuO: Raman Scattering Studies

2000-11-30

arxiv.org/abs/cond-mat/0011527v3

Physics

Condensed Matter

Strongly Correlated Electrons

19 pages, 13 figures on 5 pages (Gif format)

Scientific paper

10.1103/PhysRevB.64.174412

We present inelastic light scattering measurements of EuO and Eu$_{1-x}$La$_{x}$B$_6$ ($x$=0, 0.005, 0.01, 0.03, and 0.05) as functions of doping, B isotope, magnetic field, and temperature. Our results reveal a variety of distinct regimes as a function of decreasing T: (a) a paramagnetic semimetal regime, which is characterized by a collision-dominated electronic scattering response whose scattering rate $\Gamma$ decreases with decreasing temperature; (b) a spin-disorder scattering regime, which is characterized by a collision-dominated electronic scattering response whose scattering rate $\Gamma$ scales with the magnetic susceptibility; (c) a magnetic polaron (MP) regime, in which the development of an $H$=0 spin-flip Raman response betrays the formation of magnetic polarons in a narrow temperature range above the Curie temperature T$_{\rm C}$; and (d) a ferromagnetic metal regime, characterized by a flat electronic continuum response typical of other strongly correlated metals. By exploring the behavior of the Raman responses in these various regimes in response to changing external parameters, we are able to investigate the evolution of charge and spin degrees of freedom through various transitions in these materials.

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