Magnetic patterning of (Ga,Mn)As by hydrogen passivation

Details Magnetic patterning of (Ga,Mn)As by hydrogen passivation Magnetic patterning of (Ga,Mn)As by hydrogen passivation

2007-06-14

arxiv.org/abs/0706.2138v1

Physics

Condensed Matter

Materials Science

Scientific paper

10.1063/1.2795790

We present an original method to magnetically pattern thin layers of (Ga,Mn)As. It relies on local hydrogen passivation to significantly lower the hole density, and thereby locally suppress the carrier-mediated ferromagnetic phase. The sample surface is thus maintained continuous, and the minimal structure size is of about 200 nm. In micron-sized ferromagnetic dots fabricated by hydrogen passivation on perpendicularly magnetized layers, the switching fields can be maintained closer to the continuous film coercivity, compared to dots made by usual dry etch techniques.

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