Magnetic Field Pinning of a Dynamic Electron-Spin-Resonance Line in a GaAs/AlGaAs Heterostructure

Details Magnetic Field Pinning of a Dynamic Electron-Spin-Resonance Line in a GaAs/AlGaAs Heterostructure Magnetic Field Pinning of a Dynamic Electron-Spin-Resonance Line in a GaAs/AlGaAs Heterostructure

2001-08-04

arxiv.org/abs/cond-mat/0108080v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures

Scientific paper

10.1103/PhysRevB.64.201308

Electrically detected electron spin resonance (ESR) is used to study the hyperfine interaction of the two-dimensional electrons and the nuclei of the host lattice in a GaAs/AlGaAs heterostructure. Under the microwave and radio- frequency double excitations, we have observed that the ESR line can be pinned in a very narrow range of magnetic field - in the vicinity of the nuclear magnetic resonance (NMR) of the nuclei of the GaAs crystal. Our observations suggest that this pinning effect is the result of a competition process between the ESR induced dynamic nuclear polarization and the NMR induced depolarization.

Affiliated with

Also associated with

No associations

Rating

Magnetic Field Pinning of a Dynamic Electron-Spin-Resonance Line in a GaAs/AlGaAs Heterostructure does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Magnetic Field Pinning of a Dynamic Electron-Spin-Resonance Line in a GaAs/AlGaAs Heterostructure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic Field Pinning of a Dynamic Electron-Spin-Resonance Line in a GaAs/AlGaAs Heterostructure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-43933