Magnetic Field-Induced Fano Profiles in the Absorption Coefficient of Semiconductors

Details Magnetic Field-Induced Fano Profiles in the Absorption Coefficient of Semiconductors Magnetic Field-Induced Fano Profiles in the Absorption Coefficient of Semiconductors

1996-03-20

arxiv.org/abs/cond-mat/9603133v1

Physics

Condensed Matter

Scientific paper

A strongly asymmetric, Fano-like resonance profile has been found for magneto-absorption in the states of hot free electron-hole pairs scattered by defects in bulk semiconductors. The renormalization of the absorption profile, compared to that expected from the bare density of states in a high magnetic field, follows from a quasi-one-dimensional character of electronic excitations. The results are valid for absorption by the electronic states of large Landau quantum number where the Coulomb interaction should play a minor role. The resonance shape is in a good qualitattive agreement with experimental observations.

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