Magnetic Field Induced Charged Exciton Studies in a GaAs/Al(0.3)Ga(0.7)As Single Heterojunction

Details Magnetic Field Induced Charged Exciton Studies in a GaAs/Al(0.3)Ga(0.7)As Single Heterojunction Magnetic Field Induced Charged Exciton Studies in a GaAs/Al(0.3)Ga(0.7)As Single Heterojunction

1999-05-19

arxiv.org/abs/cond-mat/9905290v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

submitted to Phys. Rev. Lett

Scientific paper

The magnetophotoluminescence (MPL) behavior of a GaAs/Al(0.3)Ga(0.7)As single heterojunction has been investigated to 60T. We observed negatively charged singlet and triplet exciton states that are formed at high magnetic fields beyond the nu=1 quantum Hall state. The variation of the charged exciton binding energies are in good agreement with theoretical predictions. The MPL transition intensities for these states showed intensity variations (maxima and minima) at the nu=1/3 and 1/5 fractional quantum Hall (FQH) state as a consequence of a large reduction of electron-hole screening at these filling factors.

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