Magnetic-field-enhanced outgoing excitonic resonance in multi-phonon Raman scattering from polar semiconductors

Details Magnetic-field-enhanced outgoing excitonic resonance in multi-phonon Raman scattering from polar semiconductors Magnetic-field-enhanced outgoing excitonic resonance in multi-phonon Raman scattering from polar semiconductors

1996-02-21

arxiv.org/abs/cond-mat/9602117v1

Physics

Condensed Matter

6 pages, 2 eps-figures

Scientific paper

10.1088/0953-8984/8/36/027

A combined scattering mechanism involving the states of free electron-hole pairs (exciton continuum) and discrete excitons as intermediate states in the multi-phonon Raman scattering leads to (1) a strong increase of the scattering efficiency in the presence of a high magnetic field and to (2) an outgoing excitonic resonance: the two features are not compatible when only free pairs (leading to a strong increase of the scattering efficiency under the applied magnetic field) or discrete excitons (resulting in the outgoing resonance at the excitonic gap) are taken into account.

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