Physics – Condensed Matter – Materials Science
Scientific paper
2003-01-13
Physics
Condensed Matter
Materials Science
RevTeX 4, 3 two-column pages, 4 colour figures; to appear in J Appl Phys
Scientific paper
10.1063/1.1534622
We have studied the magnetic-field and concentration dependences of the magnetizations of the hole and Mn subsystems in diluted ferromagnetic semiconductor Ga_{1-x}Mn_xAs. A mean-field approximation to the hole-mediated interaction is used, in which the hole concentration p(x) is parametrized in terms of a fitting (of the hole effective mass and hole/local moment coupling) to experimental data on the Tc critical temperature. The dependence of the magnetizations with x, for a given temperature, presents a sharply peaked structure, with maxima increasing with applied magnetic field, which indicates that application to diluted-magnetic-semiconductor devices would require quality-control of the Mn-doping composition. We also compare various experimental data for Tc(x) and p(x) on different Ga_{1-x}Mn_xAs samples and stress the need of further detailed experimental work to assure that the experimental measurements are reproducible.
Castro d'Albuquerque J. e.
dos Santos Raimundo R.
Oliveira Luiz E.
No associations
LandOfFree
Magnetic-field effects in defect-controlled ferromagnetic Ga_{1-x}Mn_xAs semiconductors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Magnetic-field effects in defect-controlled ferromagnetic Ga_{1-x}Mn_xAs semiconductors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic-field effects in defect-controlled ferromagnetic Ga_{1-x}Mn_xAs semiconductors will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-323322