Magic Islands and Barriers to Attachment: A Si/Si(111)7x7 Growth Model

Details Magic Islands and Barriers to Attachment: A Si/Si(111)7x7 Growth Model Magic Islands and Barriers to Attachment: A Si/Si(111)7x7 Growth Model

1999-05-06

arxiv.org/abs/cond-mat/9905077v1

Physics

Condensed Matter

4 pages including 5 figures, REVTeX, submitted to Physical Review B

Scientific paper

10.1103/PhysRevB.60.13869

Surface reconstructions can drastically modify growth kinetics during initial stages of epitaxial growth as well as during the process of surface equilibration after termination of growth. We investigate the effect of activation barriers hindering attachment of material to existing islands on the density and size distribution of islands in a model of homoepitaxial growth on Si(111)7x7 reconstructed surface. An unusual distribution of island sizes peaked around "magic" sizes and a steep dependence of the island density on the growth rate are observed. "Magic" islands (of a different shape as compared to those obtained during growth) are observed also during surface equilibration.

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