Macroscopic Superconducting Current through a Silicon Surface Reconstruction with Indium Adatoms: Si(111)-(R7$\times$R3)-In

Details Macroscopic Superconducting Current through a Silicon Surface Reconstruction with Indium Adatoms: Si(111)-(R7$\times$R3)-In Macroscopic Superconducting Current through a Silicon Surface Reconstruction with Indium Adatoms: Si(111)-(R7$\times$R3)-In

2011-07-20

arxiv.org/abs/1107.3902v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures; The error in the values of 2D critical current density $J_\mathrm{2D,c}$ was corrected. In the old version

Scientific paper

Macroscopic and robust supercurrents are observed by direct electron transport measurements on a silicon surface reconstruction with In adatoms (Si(111)-(R7xR3)-In). The superconducting transition manifests itself as an emergence of the zero resistance state below 2.8 K. $I-V$ characteristics exhibit sharp and hysteretic switching between superconducting and normal states with well-defined critical and retrapping currents. The two-dimensional (2D) critical current density $J_\mathrm{2D,c}$ is estimated to be as high as $1.8 \ \mathrm{A/m}$ at 1.8 K. The temperature dependence of $J_\mathrm{2D,c}$ indicates that the surface atomic steps play the role of strongly coupled Josephson junctions.

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