Physics – Condensed Matter – Materials Science
Scientific paper
2002-03-13
Physics
Condensed Matter
Materials Science
20 pages, to be published in IOS Press
Scientific paper
The optical properties of point defects in as-grown natural silica are reviewed. Two emissions peaked at 4.2 eV ($\alpha_E$ band) and at 3.1 eV ($\beta$ band), related to an absorption band at 5.1 eV ($B_{2\beta}$), have been experimentally investigated on the basis of their temperature dependence and their kinetic decay. Our results allow to characterize the excitation pathway of these luminescence bands and to make clear the competition between the radiative relaxation rates and the phonon assisted intersystem crossing process linking the singlet and the triplet excited states from which $\alpha_E$ and $\beta$, respectively, originate. Finally, we discuss the role played by the disordered vitreous matrix in influencing the optical features of defects.
No associations
LandOfFree
Luminescence properties of point defects in silica does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Luminescence properties of point defects in silica, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Luminescence properties of point defects in silica will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-252316