Lower current-driven exchange switching threshold in noncollinear magnetic junctions under high spin injection

Details Lower current-driven exchange switching threshold in noncollinear magnetic junctions under high spin injection Lower current-driven exchange switching threshold in noncollinear magnetic junctions under high spin injection

2009-03-30

arxiv.org/abs/0903.5131v1

Physics

Condensed Matter

Materials Science

5 pages, 1 figure

Scientific paper

Current-induced switching is considered in a magnetic junction. The junction
includes pinned and free ferromagnetic layers which work in the regime of the
high spin injection. It is shown that in such a regime the exchange
magnetization reversal threshold can be lowered up to two times when the axes
of the layers are noncollinear.

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