Low-voltage organic transistors and inverters with ultra-thin fluoropolymer gate dielectric

Details Low-voltage organic transistors and inverters with ultra-thin fluoropolymer gate dielectric Low-voltage organic transistors and inverters with ultra-thin fluoropolymer gate dielectric

2009-11-06

arxiv.org/abs/0911.1219v1

Appl. Phys. Lett. 95, 233301 (2009)

Physics

Condensed Matter

Materials Science

Accepted for publication in Applied Physics Letters

Scientific paper

10.1063/1.3267055

We report on the simple fabrication of hysteresis-free and electrically stable organic field-effect transistors (OFETs) and inverters operating at voltages <1-2 V, enabled by the almost trap-free interface between the organic semiconductor and an ultra-thin (<20 nm) and highly insulating single-layer fluoropolymer gate dielectric (Cytop). OFETs with PTCDI-C13 (N,N'-ditridecylperylene-3,4,9,10-tetracarboxylicdiimide) as semiconductor exhibit outstanding transistor characteristics: very low threshold voltage (0.2V), onset at 0V, steep subthreshold swing (0.1-0.2 V/decade), no hysteresis and excellent stability against gate bias stress. It is gratifying to notice that such small OFET operating voltages can be achieved with the relatively simple processing techniques employed in this study.

Affiliated with

Also associated with

No associations

Rating

Low-voltage organic transistors and inverters with ultra-thin fluoropolymer gate dielectric does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Low-voltage organic transistors and inverters with ultra-thin fluoropolymer gate dielectric, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low-voltage organic transistors and inverters with ultra-thin fluoropolymer gate dielectric will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-391103