Low-voltage nanodomain writing in He-implanted lithium niobate crystals

Details Low-voltage nanodomain writing in He-implanted lithium niobate crystals Low-voltage nanodomain writing in He-implanted lithium niobate crystals

2010-09-09

arxiv.org/abs/1009.1907v1

Appl. Phys. Lett. 96, 082902 (2010)

Physics

Condensed Matter

Materials Science

Scientific paper

A scanning force microscope tip is used to write ferroelectric domains in He-implanted single-crystal lithium niobate and subsequently probe them by piezoresponse force microscopy. Investigation of cross-sections of the samples showed that the buried implanted layer, $\sim 1$\,\textmu m below the surface, is non-ferroelectric and can thus act as a barrier to domain growth. This barrier enabled stable surface domains of $< 1$\,\textmu m size to be written in 500\,\textmu m-thick crystal substrates with voltage pulses of only 10\,V applied to the tip.

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