Physics – Condensed Matter – Superconductivity
Scientific paper
2009-10-28
Physics
Condensed Matter
Superconductivity
4 pages including 4 figures, submitted to PRB-Rapid Communication
Scientific paper
We report on a detailed analysis of the superconducting properties of boron-doped silicon films grown along the 001 direction by Gas Immersion Laser Doping. The doping concentration cB has been varied up to approx. 10 at.% by increasing the number of laser shots to 500. No superconductivity could be observed down to 40mK for doping level below 2.5 at.%. The critical temperature Tc then increased steeply to reach 0.6K for cB = 8 at%. No hysteresis was found for the transitions in magnetic field, which is characteristic of a type II superconductor. The corresponding upper critical field Hc2(0) was on the order of 1000 G, much smaller than the value previously reported by Bustarret et al. in Nature (London) 444, 465 (2006).
Achatz Philipp
Boulmer J.
Bustarret Etienne
Debarre D.
Dubois Catherine
No associations
LandOfFree
Low temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Low temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-718382