Low temperature STM on InAs (110) accumulation surfaces

Details Low temperature STM on InAs (110) accumulation surfaces Low temperature STM on InAs (110) accumulation surfaces

1997-08-14

arxiv.org/abs/cond-mat/9708098v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

7 pages, 5 figures. Se also http://vortex.tn.tudelft.nl/mensen/leok/papers/

Scientific paper

The properties of InAs (110) surfaces have been investigated by means of low-temperature scanning tunneling microscopy and spectroscopy. A technique for ex-situ sulphur passivation has been developed to form an accumulation layer on such a surface. Tunneling spectroscopy at 4.2 K shows the presence of 2D subbands in the accumulation layer. Measurements in high-magnetic field demonstrate Landau quantization of the energy spectrum, both in the 2D subbands and the 3D bulk conduction band.

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