Low-temperature spin relaxation in n-type GaAs

Details Low-temperature spin relaxation in n-type GaAs Low-temperature spin relaxation in n-type GaAs

2002-08-05

arxiv.org/abs/cond-mat/0208083v2

Physics

Condensed Matter

Scientific paper

10.1103/PhysRevB.66.245204

Low-temperature electron spin relaxation is studied by the optical orientation method in bulk n-GaAs with donor concentrations from 10^14 cm^{-3} to 5x10^17 cm^{-3}. A peculiarity related to the metal-to-insulator transition (MIT) is observed in the dependence of the spin lifetime on doping near n_D = 2x10^16 cm^{-3}. In the metallic phase, spin relaxation is governed by the Dyakonov-Perel mechanism, while in the insulator phase it is due to anisotropic exchange interaction and hyperfine interaction

Affiliated with

Also associated with

No associations

Rating

Low-temperature spin relaxation in n-type GaAs does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Low-temperature spin relaxation in n-type GaAs, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low-temperature spin relaxation in n-type GaAs will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-250893