Low-temperature resistivity saturation in the Kondo insulator SmB$_6$: Indication for another scenario of hopping-type conductivity

Details Low-temperature resistivity saturation in the Kondo insulator SmB$_6$: Indication for another scenario of hopping-type conductivity Low-temperature resistivity saturation in the Kondo insulator SmB$_6$: Indication for another scenario of hopping-type conductivity

2007-10-05

arxiv.org/abs/0710.1159v3

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, 2 figures

Scientific paper

We provide arguments that dynamical changes of energies of impurity states due to valence fluctuations (VFs) result in non-equilibrium energy distribution function of localized charge carriers. Corresponding hopping type of conductivity that does not require a thermal activation can explain unusual metallic-like conduction of SmB$_6$ and other Kondo insulators experimentally observed at lowest temperatures. A qualitatively similar hopping process is expected in metal-oxide-semiconductor (MOS) structures due to local dynamical changes of voltage potential in the metal (gate) electrode.

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