Low temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates

Details Low temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates Low temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates

2007-03-26

arxiv.org/abs/cond-mat/0703661v1

J. Appl. Phys. 99, 093514, 2006

Physics

Condensed Matter

Materials Science

19 pages, 14 figures

Scientific paper

Thin epitaxial GaAs films, with thickness varying from 140 to 1000 nm and
different Si doping levels, were grown at 650C by organometallic vapor phase
epitaxy (OMVPE) on Ge substrates and extensively analyzed by low-temperature
photoluminescence (PL) spectroscopy.

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