Low-temperature photoluminescence of oxide-covered single-layer MoS2

Details Low-temperature photoluminescence of oxide-covered single-layer MoS2 Low-temperature photoluminescence of oxide-covered single-layer MoS2

2011-12-16

arxiv.org/abs/1112.3747v3

Phys. Status Solidi Rapid Research letters 6, No. 3, 126-128 (2012)

Physics

Condensed Matter

Materials Science

3 pages, 2 figures

Scientific paper

10.1002/pssr.201105589

We present a photoluminescence study of single-layer MoS2 flakes on SiO2 surfaces. We demonstrate that the luminescence peak position of flakes prepared from natural MoS2, which varies by up to 25 meV between individual as-prepared flakes, can be homogenized by annealing in vacuum, which removes adsorbates from the surface. We use HfO2 and Al2O3 layers prepared by atomic layer deposition to cover some of our flakes. We clearly observe a suppression of the low-energy luminescence peak observed for as-prepared flakes at low temperatures, indicating that this peak originates from excitons bound to surface adsorbates. We also observe different temperature-induced shifts of the luminescence peaks for the oxide-covered flakes. This effect stems from the different thermal expansion coefficients of the oxide layers and the MoS2 flakes. It indicates that the single-layer MoS2 flakes strongly adhere to the oxide layers and are therefore strained.

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