Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions

Details Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions

2009-10-21

arxiv.org/abs/0910.4010v1

Appl. Phys. Lett. 95, 262101 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

10 pages, 3 figures

Scientific paper

10.1063/1.3276560

We report on the observation of inertial-ballistic transport in nanoscale
cross junctions fabricated from epitaxial graphene grown on SiC(0001).
Ballistic transport is indicated by a negative bend resistance of R12,43 ~ 170
ohm which is measured in a non-local, four-terminal configuration at 4.2 K and
which vanishes as the temperature is increased above 80 K.

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