Low-T_c Josephson junctions with tailored barrier

Details Low-T_c Josephson junctions with tailored barrier Low-T_c Josephson junctions with tailored barrier

2006-12-06

arxiv.org/abs/cond-mat/0612164v2

J. Appl. Phys. 101, 063902 (2007)

Physics

Condensed Matter

Superconductivity

6 pages, 6 figures, small changes, to be published by JAP

Scientific paper

10.1063/1.2655487

Nb/Al_2O_3/Ni_{0.6}Cu_{0.4}/Nb based superconductor-insulator-ferromagnet-superconductor (SIFS) Josephson tunnel junctions with a thickness step in the metallic ferromagnetic \Ni_{0.6}\Cu_{0.4} interlayer were fabricated. The step was defined by optical lithography and controlled etching. The step height is on the scale of a few angstroms. Experimentally determined junction parameters by current-voltage characteristics and Fraunhofer pattern indicate an uniform F-layer thickness and the same interface transparencies for etched and non-etched F-layers. This technique could be used to tailor low-T_c Josephson junctions having controlled critical current densities at defined parts of the junction area, as needed for tunable resonators, magnetic-field driven electronics or phase modulated devices.

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