Low-noise top-gate graphene transistors

Details Low-noise top-gate graphene transistors Low-noise top-gate graphene transistors

2009-08-23

arxiv.org/abs/0908.3304v1

Applied Physics Letters, 95, 033103 (2009)

Physics

Condensed Matter

Materials Science

9 pages, 4 figures

Scientific paper

We report results of experimental investigation of the low-frequency noise in the top-gate graphene transistors. The back-gate graphene devices were modified via addition of the top gate separated by 20 nm of HfO2 from the single-layer graphene channels. The measurements revealed low flicker noise levels with the normalized noise spectral density close to 1/f (f is the frequency) and Hooge parameter below 2 x 10^-3. The analysis of the noise spectral density dependence on the top and bottom gate biases helped us to elucidate the noise sources in these devices and develop a strategy for the electronic noise reduction. The obtained results are important for all proposed graphene applications in electronics and sensors.

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