Physics – Condensed Matter – Materials Science
Scientific paper
2005-12-22
Nano Lett. 2006; 6(5); 930-936
Physics
Condensed Matter
Materials Science
Scientific paper
10.1021/nl052528d
We present a systematic study on low-frequency current fluctuations of nano-devices consisting of one single semiconducting nanotube, which exhibit significant 1/f-type noise. By examining devices with different switching mechanisms, carrier types (electrons vs. holes), and channel lengths, we show that the 1/f fluctuation level in semiconducting nanotubes is correlated to the total number of transport carriers present in the system. However, the 1/f noise level per carrier is not larger than that of most bulk conventional semiconductors, e.g. Si. The pronounced noise level observed in nanotube devices simply reflects on the small number of carriers involved in transport. These results not only provide the basis to quantify the noise behavior in a one-dimensional transport system, but also suggest a valuable way to characterize low-dimensional nanostructures based on the 1/f fluctuation phenomenon.
Appenzeller Joerg
Avouris Phaedon
Chen Zhihong
Knoch Joachin
Lin Yu-Ming
No associations
LandOfFree
Low-frequency Current Fluctuations in Individual Semiconducting Single-Wall Carbon Nanotubes does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Low-frequency Current Fluctuations in Individual Semiconducting Single-Wall Carbon Nanotubes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low-frequency Current Fluctuations in Individual Semiconducting Single-Wall Carbon Nanotubes will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-726157