Low field magnetotransport in strained Si/SiGe cavities

Details Low field magnetotransport in strained Si/SiGe cavities Low field magnetotransport in strained Si/SiGe cavities

2004-11-16

arxiv.org/abs/cond-mat/0411415v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Submitted to Physical Review B, 25 pages, 7 figures

Scientific paper

10.1103/PhysRevB.71.245311

Low field magnetotransport revealing signatures of ballistic transport effects in strained Si/SiGe cavities is investigated. We fabricated strained Si/SiGe cavities by confining a high mobility Si/SiGe 2DEG in a bended nanowire geometry defined by electron-beam lithography and reactive ion etching. The main features observed in the low temperature magnetoresistance curves are the presence of a zero-field magnetoresistance peak and of an oscillatory structure at low fields. By adopting a simple geometrical model we explain the oscillatory structure in terms of electron magnetic focusing. A detailed examination of the zero-field peak lineshape clearly shows deviations from the predictions of ballistic weak localization theory.

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