Low energy exciton states in a nanoscopic semiconducting ring

Details Low energy exciton states in a nanoscopic semiconducting ring Low energy exciton states in a nanoscopic semiconducting ring

2000-10-13

arxiv.org/abs/cond-mat/0010186v1

Phys. Rev. B 63, 045320 (2001)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures, revised and accepted by Phys. Rev. B

Scientific paper

10.1103/PhysRevB.63.045320

We consider an effective mass model for an electron-hole pair in a simplified confinement potential, which is applicable to both a nanoscopic self-assembled semiconducting InAs ring and a quantum dot. The linear optical susceptibility, proportional to the absorption intensity of near-infrared transmission, is calculated as a function of the ring radius $% R_0$. Compared with the properties of the quantum dot corresponding to the model with a very small radius $R_0$, our results are in qualitative agreement with the recent experimental measurements by Pettersson {\it et al}.

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