Physics – Condensed Matter – Mesoscale and Nanoscale Physics
Scientific paper
2006-08-17
Journal of Modern Optics 54, 431 (2007)
Physics
Condensed Matter
Mesoscale and Nanoscale Physics
12 Pages, to be published in Journal of Modern Optics
Scientific paper
10.1080/09500340600759605
We present experimental and numerical studies of a light-emitting transistor comprising two quasi-lateral junctions between a two-dimensional electron and hole gas. These lithographically defined junctions are fabricated by etching of a modulation doped GaAs/AlGaAs heterostructure. In this device electrons and holes can be directed to the same area by drain and gate voltages, defining a recombination zone tunable in size and position. It could therefore provide an architecture for probing low-dimensional devices by analysing the emitted light of the recombination zone.
Janssen J. B. T. M.
Kaestner Bernd
Wunderlich Joerg
No associations
LandOfFree
Low-dimensional light-emitting transistor with tunable recombination zone does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Low-dimensional light-emitting transistor with tunable recombination zone, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low-dimensional light-emitting transistor with tunable recombination zone will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-388517