Low-current control of domain wall motion in CoB/Ni-based multilayer nanowire

Details Low-current control of domain wall motion in CoB/Ni-based multilayer nanowire Low-current control of domain wall motion in CoB/Ni-based multilayer nanowire

2011-10-24

arxiv.org/abs/1110.5112v1

Physics

Condensed Matter

Materials Science

18 pages, 5 figures

Scientific paper

Spin-transfer torque motion of magnetic domain walls in a CoB/Ni-based nanowire under low current density ((1.12\pm0.8)\times1011 Am-2) has been observed indirectly in terms of magnetotransport measurement. High domain wall velocity at zero-field of 85\pm4 m/s is measured at the threshold current density and the velocity rises up to 197\pm16 m/s as increasing the current density to 2.6\times1011 Am-2 before being reduced quickly at high current regime in accordance with non-adiabatic mechanism at low damping and weak pinning. Decrement of saturation magnetization, Gilbert damping factor and pinning sites induced by the addition of the B atoms to the Co layers is ascribed to be the origin of such advantages in the studied CoB/Ni multilayer nanowire.

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